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Last modification on : Thursday, February 7, 2019 - 4:56:13 PMReactive ion etching of SiC in SF6 gas: detection of CF, CF2 and SiF2

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The film's deposition rate was found to increase with the decreasing CF4 concentration in the gas mixture. Fourier transform spectroscopy revealed the

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SF6 and CF4 gases, leading to high corresponding to the N2 molecule are observed (-generated plasmas produced in Ar/SF6 mixtures

Breakdown characteristics of SF6 /CF4 mixtures in 25.8 kV

SF<sub>6</sub> gas has excellent dielectric strength, but it causes global warming about 23900 times more than CO<sub>2</

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The design and use of equipment and installations applying SF6 gas or SF6/CF4 gas mixtures have been considered in Sect.  12.2and Part C of this

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Reactive ion etching of SiC in SF6 gas: detection of CF, CF2 and SiF2 etch products. Applied Physics Letters, American Institute of Physics, 2001,